RFMR29-SFEM-200-400A

Description

RFHIC’s RFMR29-SFEM-200-400A is an S-band gallium nitride transmitter/receiver module (GaN T/RM) designed for radar systems applications. Operating from 2.7 to 3.1 GHz, the RFMR29-SFEM-200-400A achieves 200 W output power with a TX gain of 59 dB. The RFMR29-SFEM-200-400A is designed using our gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. The RFMR29-SFEM-200-400A achieves a duty cycle of 10% and a pulse width of 100 us. The RFMR29-SFEM-200-400A has a circulator that provides duplex functions and a limiter diode to protect the receiver. Bias sequence circuit is included. The RFMR29-SFEM-200-400A is fabricated on our cutting-edge gallium nitride (GaN) on silicon carbide (SiC) technology, resulting in higher power density, efficiency, wider bandwidth, and efficient thermal management.