Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

The SDM18003-30H is a fully integrated micro-strip GaN Hybrid power amplifier module designed for 5G m-MIMO, TDD/FDD systems, mobile infrastructure, small cells and low power remote radio heads. The SDM18003-30H operates from 1805 to 1880 MHz and delivers a saturated power of 44.1 W. This amplifier is internally matched to 50 ohms over the entire operating frequency range and provides a drain voltage of 48V. The SDM18003-30H is available in a packaged ceramic surface mount package that measures 8x14x2.6mm.
View Product SpecificationMin Freq. | 1805MHz |
---|---|
Max Freq. | 1880MHz |
Typ Output Power | 1.1W |
Saturation Power | 44.1W |
Power Gain | 44dB |
Efficiency | 13% |
VDC | 48 |
Package | PP-3G |
Package Type | Surface Mount |