Products RF Transistors Transistors - Wireless Infrastructure H002C12A

H002C12A

Transistors - Wireless Infrastructure
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Description

RFHIC’s H002C12A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 2496 to 2690 MHz.The H002C11A delivers 195 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.2496MHz
Max Freq.2690MHz
Typ Output Power32W
Saturation Power195W
Power Gain14.4dB
Efficiency53%
VDC48
PackageRF12001DHKR3-PK2
Package TypeFlange

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