Products RF Transistors Transistors - Wireless Infrastructure H009C12A

H009C12A

Transistors - Wireless Infrastructure
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Description

RFHIC’s H009C12A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 2200 MHz.The H009C12A delivers 398 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.1800MHz
Max Freq.2200MHz
Typ Output Power79W
Saturation Power398W
Power Gain14.7dB
Efficiency52%
VDC48
PackageRF24010DKR3
Package TypeFlange

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