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H016C12A

Transistors - Wireless Infrastructure
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Description

RFHIC’s H016C12A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz.The H016C12A delivers 320 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.1805MHz
Max Freq.1880MHz
Typ Output Power50W
Saturation Power320W
Power Gain13.9dB
Efficiency56%
VDC48
PackageRF18010DKR3
Package TypeFlange

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