Products RF Transistors Transistors - Wireless Infrastructure H108C11A

H108C11A

Transistors - Wireless Infrastructure
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Description

RFHIC’s H108C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3600 MHz.The H108C11A delivers 174 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.3400MHz
Max Freq.3600MHz
Typ Output Power26W
Saturation Power174W
Power Gain14dB
Efficiency44%
VDC48
PackageRF12001DHKR3
Package TypeFlange

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