Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RRP33250-11
Description
RFHIC’s RRP33250-11 is an S-band, 250W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 3100 to 3500 MHz, the RRP33250-11 achieves 31dB of gain with an efficiency of 40%. The RRP33250-11 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency.
View Product Specification
Weather Radar
Air Traffic Control Radar
Surveillance Ground Radar
Meteorological Radar
Early Detection Radar
Specification
| Band | S-band |
|---|---|
| Min Freq. | 3100MHz |
| Max Freq. | 3500MHz |
| Type | Pallet |
| Typ Output Power | 250W |
| Power Gain | 31dB |
| PAE | 40% |
| VDC | 50 |
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