Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
SDM18007-30H
Description
The SDM18007-30H is a fully integrated micro-strip GaN Hybrid power amplifier module designed for applications in 4G LTE MIMO systems, small cells and low power remote radio heads. The SDM18007-30H operates from 1805 to 1880 MHz and delivers a saturated power of 89.1 W. This amplifier is internally matched to 50 ohms over the entire operating frequency range and provides a drain voltage of 48V. The SDM18007-30H is available in a packaged ceramic surface mount package that measures 8x14x2.6mm.
View Product Specification
Massive MIMO
4G System
Multi-Band, Multi-Mode
Multi-Carrier
RRH Drive Amplifier
Specification
| Min Freq. | 1805MHz |
|---|---|
| Max Freq. | 1880MHz |
| Typ Output Power | 3.16W |
| Saturation Power | 89.1W |
| Power Gain | 42dB |
| Efficiency | 16% |
| VDC | 48 |
| Package | PP-3G |
| Package Type | Surface Mount |
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