Products RF Transistors Transistors - Wireless Infrastructure ID22801D

ID22801D

Transistors - Wireless Infrastructure
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Description

RFHIC’s ID22801D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2170 MHz.The ID22801D delivers 762 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

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Datasheet

WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

Specification

Min Freq.2110MHz
Max Freq.2170MHz
Typ Output Power104.7W
Saturation Power762W
Power Gain15.9dB
Efficiency53%
VDC48
PackageRF26009DKR3
Package TypeFlange

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