Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
4G LTE
Delivering unprecedented energy efficiency and compact configurations with RFHIC gallium nitride (GaN) on Silicon Carbide (SiC) technology solutions for 4G LTE macro base stations
4G LTE
RFHIC's product portfolio to support 4G LTE delivers compact size, excellent efficiency, and superior performance, simplifying design and integration. RFHIC's product lineup includes a broad portfolio of gallium nitride (GaN) based solutions operable in sub-6GHz with high power capabilities.
Latest 4G LTE Products
ID19601D ›
RFHIC’s ID19601D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 1995 MHz....
ID22601D ›
RFHIC’s ID22601D is a discrete gallium nitride on silicon carbide (GaN-onSiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2200 MHz.D...
ID26411D ›
RFHIC’s ID26411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2570 to 2620 MHz....
ID18411D ›
RFHIC’s ID18411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 1880 MHz....
