Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE26195WD

IE26195WD

GaN 트랜지스터 – 통신
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RFHIC’s IE26195WD is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency of 54% at Psat. The IE26195WD is designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for LTE, multi-carrier, and Doherty amplifier base station equipment applications.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.2575MHz
Max Freq.2635MHz
Typ Output Power32W
Saturation Power195W
Power Gain14.4dB
Efficiency54%
VDC48
PackageRF12001DKR3
Package TypeFlange

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