통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s H017 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 2700 MHz.The H017 delivers 28.2 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.
View Product SpecificationMin Freq. | 1800MHz |
---|---|
Max Freq. | 2700MHz |
Typ Output Power | 2W |
Saturation Power | 28.2W |
Power Gain | 17.9dB |
Efficiency | 30% |
VDC | 48 |
Package | DFN66726L-Q2 |
Package Type | Surface Mount |