H017

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s H017 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 2700 MHz.The H017 delivers 28.2 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.1800MHz
Max Freq.2700MHz
Typ Output Power2W
Saturation Power28.2W
Power Gain17.9dB
Efficiency30%
VDC48
PackageDFN66726L-Q2
Package TypeSurface Mount