통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s ID36541D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3800 MHz.The ID36541D delivers 540 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 5G NR systems.
View Product SpecificationMin Freq. | 3400MHz |
---|---|
Max Freq. | 3800MHz |
Typ Output Power | 56.2W |
Saturation Power | 540W |
Power Gain | 13.6dB |
Efficiency | 40% |
VDC | 48 |
Package | RF24009DKR3 |
Package Type | Flange |