Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID26461D

ID26461D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID26461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz.The ID26461D delivers 447 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

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Datasheet

WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.2620MHz
Max Freq.2690MHz
Typ Output Power56.2W
Saturation Power447W
Power Gain16.1dB
Efficiency57%
VDC48
PackageRF24008DKR3
Package TypeFlange

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