ID22441D

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s ID22441D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2170 MHz.The ID22441D delivers 407 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

View Product Specification
WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.2110MHz
Max Freq.2170MHz
Typ Output Power53.7W
Saturation Power407W
Power Gain17.4dB
Efficiency58%
VDC48
PackageRF24008DKR3
Package TypeFlange