Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE26110P

IE26110P

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE26110P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2500 to 2690 MHz. The IE26110P delivers 110 W of saturated power at 48V with a drain efficiency of 40% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our NS-AS01 ceramic package. The IE26110P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.2500MHz
Max Freq.2690MHz
Typ Output Power25W
Saturation Power110W
Power Gain19.1dB
Efficiency40%
VDC48
PackageNS-AS01
Package TypeFlange

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