Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE21165PE

IE21165PE

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE21165PE is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2170 MHz. The IE21165PE delivers 170 W of saturated power at 48V with a drain efficiency of 40% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our NS-AS01 ceramic package. The IE21165PE can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.2110MHz
Max Freq.2170MHz
Typ Output Power37W
Saturation Power170W
Power Gain18dB
Efficiency40%
VDC48
PackageNS-DS01
Package TypeFlange

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