Products RF 트랜지스터 GaN 트랜지스터 – 통신 H001C11A

H001C11A

GaN 트랜지스터 – 통신
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설명

RFHIC’s H001C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1880 to 2025 MHz.The H001C11A delivers 195 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.1880MHz
Max Freq.2025MHz
Typ Output Power32W
Saturation Power195W
Power Gain16.9dB
Efficiency48%
VDC48
PackageRF12001DKR3-PK2
Package TypeFlange

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