통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s H024 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 4500 to 4950 MHz.The H024 delivers 28 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.
View Product SpecificationMin Freq. | 4500MHz |
---|---|
Max Freq. | 4950MHz |
Typ Output Power | 5W |
Saturation Power | 28W |
Power Gain | 14dB |
Efficiency | 43% |
VDC | 48 |
Package | DFN66726L-Q2 |
Package Type | Surface Mount |