H024

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s H024 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 4500 to 4950 MHz.The H024 delivers 28 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.4500MHz
Max Freq.4950MHz
Typ Output Power5W
Saturation Power28W
Power Gain14dB
Efficiency43%
VDC48
PackageDFN66726L-Q2
Package TypeSurface Mount