Products RF 트랜지스터 GaN 트랜지스터 – 통신 H028P1

H028P1

GaN 트랜지스터 – 통신
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설명

RFHIC’s H028P1 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz.The H028P1 delivers 33.1 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.2620MHz
Max Freq.2690MHz
Typ Output Power3.2W
Saturation Power33.1W
Power Gain18.6dB
Efficiency23%
VDC48
PackageDFN66726L-Q2
Package TypeSurface Mount

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