Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID18275WD

ID18275WD

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID18275WD is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) operable from 1805 to 1880 MHz.The ID18275WD delivers 275 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.

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Datasheet

WiMAX, LTE, WCDMA
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.1805MHz
Max Freq.1880MHz
Typ Output Power50W
Saturation Power331W
Power Gain14dB
Efficiency56.4%
VDC48
PackageRF18010DKR3
Package TypeFlange

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