Products RF 트랜지스터 GaN 트랜지스터 – RF 에너지 ID24330WD

ID24330WD

GaN 트랜지스터 – RF 에너지
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설명

RFHIC’s ID24330WD is a gallium nitride (GaN) on silicon carbide (SiC) transistor designed ideally for plasma lighting, RF microwave heating, and microwave drying applications. The ID24330WD has a saturated power of 347W at 48V and a peak power of 55.4dBm at 2.4GHz. The ID24330WD operates from 2300 to 2500 MHz and is internally matched, simplifying system integration. 

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Datasheet

Plasma Lighting Systems
Microwave Heating & Drying
Solid-State Microwave Ovens
Semiconductor Equipment
Bio & Health Sciences

제품 사양

Min Freq.2300MHz
Max Freq.2500MHz
Output Power347W
Power Gain13.5dB
Drain Efficiency47.2%
VDC48
Package TypeFlange

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