Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID18411D

ID18411D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID18411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 1880 MHz.The ID18411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.

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4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier

제품 사양

Min Freq.1800MHz
Max Freq.1880MHz
Typ Output Power56.2W
Saturation Power410W
Power Gain18dB
Efficiency54%
VDC48
PackageRF24008DKR3
Package TypeFlange

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