ID37411D

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s ID37411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3600 to 3800 MHz.The ID37411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.

View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier

제품 사양

Min Freq.3600MHz
Max Freq.3800MHz
Typ Output Power56.2W
Saturation Power410W
Power Gain14.4dB
Efficiency47.2%
VDC48
PackageRF24008DKR3
Package TypeFlange