Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID26601D

ID26601D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID26601D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz.The ID26601D delivers 600 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.

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4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier

제품 사양

Min Freq.2620MHz
Max Freq.2690MHz
Typ Output Power85W
Saturation Power600W
Power Gain15dB
Efficiency47.4%
VDC48
PackageRF24009DKR3
Package TypeFlange

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