Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID18701D

ID18701D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID18701D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz.The ID18701D delivers 700 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

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Datasheet

WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.1805MHz
Max Freq.1880MHz
Typ Output Power81.3W
Saturation Power700W
Power Gain16.2dB
Efficiency54%
VDC48
PackageRF24008DKR3
Package TypeFlange

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