RIM091K1-20

GaN PA – RF 에너지
Sample Available

설명

RFHIC’s RIM091K1-20 is a 1.1kW, gallium nitride solid-state power amplifier (GaN SSPA) operable from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RIM091K1-20 is equipped with RFHIC’s gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), providing higher efficiency, reliability, and linearity. To simplify system integration, the device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports.

View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
CVD

제품 사양

Min Freq.900MHz
Max Freq.930MHz
Output Power1100W
Efficiency63%
VDC50
Operating ModeCW/Pulse
RF Input ConnectorSMA, Female
RF Output Connector7/16 DIN, Female
CoolingWater