Products GaN 전력증폭기 GaN PA – RF 에너지 RNP58200-10

RNP58200-10

GaN PA – RF 에너지
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설명

RFHIC’s RNP58200-10 is a 200W gallium-nitride solid-state power amplifier (GaN SSPA) operable from 5725 to 5875 MHz, designed ideally for plasma generation applications. Built with RFHIC’s GaN-on-SiC technology, the RNP58200-10 is suitable for both CW and pulse applications providing adjustable power, frequency, and phase-shifting features.

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Datasheet

Microwave Heating
Microwave Drying
Plasma Generation

제품 사양

Min Freq.5725MHz
Max Freq.5875MHz
Output Power200W
Efficiency38%
VDC40
RF Input ConnectorSMA, Female
RF Output ConnectorN-Type Female
CoolingWater

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