RNP09550-20

GaN PA – RF 에너지
Sample Available

설명

RFHIC’s RNP09550-20 is a 550W, gallium nitride solid-state power amplifier (GaN SSPA) operable from 910-920 MHz. It has a drain efficiency of 66% and is capable of both CW and pulsed operations. The RNP09550-20 is equipped with RFHIC’s gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), providing higher efficiency, reliability, and linearity. To simplify system integration, the device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The RNP09550-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems.

View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
Chemical Vapor Deposition (CVD)

제품 사양

Min Freq.910MHz
Max Freq.920MHz
Output Power550W
Efficiency66%
VDC50
RF Input ConnectorSMA, Female
RF Output ConnectorN-Type Female
CoolingAir