통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s ID18461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz.The ID18461D delivers 437 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE.
View Product SpecificationMin Freq. | 1805MHz |
---|---|
Max Freq. | 1880MHz |
Typ Output Power | 56.2W |
Saturation Power | 437W |
Power Gain | 17.4dB |
Efficiency | 58% |
VDC | 48 |
Package | RF24008DKR3 |
Package Type | Flange |