Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID41501D

ID41501D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID41501D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3700 to 4200 MHz.The ID41501D delivers 460 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 5G NR systems.

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datasheet

5G, WiMAX, 5G NR, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.3700MHz
Max Freq.4200MHz
Typ Output Power56.2W
Saturation Power460W
Power Gain14dB
Efficiency44%
VDC48
PackageRF24009DKR3
Package TypeFlange

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