Wireless Infrastructure

South Korea, Anyang - December 13th, 2023 - RFHIC (KOSDAQ:A218410)
Designed as efficient, internally matched, asymmetrical GaN high-electron-mobility transistors (HEMT), the OptiGaN transistors are an ideal choice for users seeking to explore the advanced capabilities of GaN-on-SiC technology for their 4G, 4G LTE, and Open RAN systems without stretching their budget.
Applications include macro cell base stations, multi carrier applications, distributed antenna systems, remote radio heads, and point-to-(multi)point links.
Discover your ideal wireless infrastructure solution with RFHIC's OptiGaN transistors, where affordability meets high-quality performance.
Unlike other transistor technologies, GaN provides the following unique advantages that make it an ideal candidate for designing RF power amplifiers for 4G, 4G LTE and Open RAN applications:
Built with RFHIC's GaN-on-SiC technology, the OptiGaN transistors are a perfect fit for customers seeking high performance at a budget-conscious price for their 4G, 4G LTE, and
Open RAN needs.
About RFHIC:
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation - to create a better connected, safer, and stronger world for generations. Learn more at www.c0006.bizhomepass.kr.
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