[Product] RFHIC’s Launches New GaN MMICs for Satellite Communications!

South Korea, Gwacheon - April 5th, 2024 - RFHIC (KOSDAQ:A218410) 

RFHIC is excited to announce our plan to release new GaN MMICs, Transistors and Low Noise Amplifiers for various applications, including satellite communications and wireless infrastructure.

GaN PA MMICs

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Covering a frequency range of C-band, X-band, Ku-band, K-band and Ka-band with an output power up to 80 W, our new GaN Power Amplifier MMICs deliver outstanding solutions for next-gen satellite communications and defense applications.They will be available in surface-mount QFN, CM1012-6L, or CM1012-6L packaging options.

Built with RFHIC's state-of-the-art gallium nitride (GaN) technology, the GaN PA MMICs provide significant advancements compared to conventional gallium arsenide (GaAs) MMICs.
With higher power density capabilities, higher efficiencies and higher voltage breakdowns, our GaN PA MMICs deliver greater levels of RF power while maintaining efficiency and linearity.
GaN devices exhibit superior thermal properties compared to GaAs, leading to improved reliablity and longevity. The superior thermal conductivity of GaN allows for efficient dissipation of heat,
reducing the risk of overheating. This thermal robustness is particularly advantageous in harsh operating environemnts and in cases of extended usage.
Additionally, our GaN PA MMICs offer far broader bandwidth capabilities, enabling solutions over a wider frequency range compared to GaAs MMICs.

Our GaN PA MMICs represent a significant leap forward in RF technology, offering an array of advantages over their GaAs counterparts. With higher power density capabilities, superior thermal properties and broader bandwidths, GaN MMICs stand as the preferred solution for high-performance RF applications, delivering excellent efficiency, reliability, and versatility.
Scheduled for launch in the second quarter of 2024.

GaN-on-SiC Transistors

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RFHIC’s new internally-matched GaN Transistors are designed for S, C and X-band operation, delivering an output power of up to 350 W. They will be available in air-cavity or hermetically-sealed packages and are suitable for wireless infrastructure applications in 4G LTE and 5G macro base stations. Scheduled for launch in the second quarter of 2024.

Low Noise Amplifier MMICs

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RFHIC’s upcoming GaN low-noise amplifiers (LNAs) are designed for operation from L to Ka-band with noise figures in the range of 1 to 2.4 dB. They will be available in module (hermetic), QFN, or ceramic QFN packaging options. These LNAs are designed for wireless communications and defense applications including WiMax, repeaters, base stations, radar, jammers, EW, and RF Subsystems. Customized solutions are available upon customer request. Scheduled for launch in the second quarter of 2024.

To learn more about our new products, click here to contact us!

About RFHIC:

RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation - to create a better connected, safer, and stronger world for generations. Learn more at www.c0006.bizhomepass.kr.

RFHIC® is a registered trademark

Media Contact:

• Grace Cho
• RFHIC Corporation
• Manager, Global Sales & Marketing
• marketing@c0006.bizhomepass.kr