Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
South Korea, Gwacheon - June 3rd, 2024 - RFHIC (KOSDAQ:A218410)
RFHIC Enhances Drone Defense Capabilities with Advanced GaN Wideband Amplifiers for
Counter-UAS Applications
RFHIC has introduced a comprehensive range of GaN wideband amplifiers, tailored for integration into counter unmanned aircraft systems (C-UAS). As the conflict in Ukraine demonstrates, commercial drones pose an escalating threat to both military and civilian targets by providing a cost-effective means for surveillance and attacks.
RWP15080-20, 700 - 2,700 MHz, 100 W, GaN Solid-State Wideband Amplifier
C-UAS are fundamentally designed around three core functions: Detection and Tracking, Identification, and Neutralization/Interdiction. These systems work to first detect and track the drone, identify it, and then either neutralize or intercept it.
Methods for drone neutralization or damage typically involve kinetic, directed energy, or electromagnetic responses. RFHIC's GaN wideband amplifiers play a crucial role in these systems by facilitating an effective electromagnetic response to drone threats. When embedded into C-UAS systems, these amplifiers support various defensive measures, including:
- Jamming: Interrupting the communication links to and from the drone, thereby disrupting its control.
- Spoofing: Manipulating the drone’s GPS to either seize control and safely land it, or to reroute it.
- Directed Energy Weapons: Employing lasers to physically damage or incapacitate the drone.
- Electronic Warfare Tactics: Using electronic methods to interfere with the drone's operational capabilities.
RFHIC's GaN wideband amplifiers are not only tactically proven but also offer reliability as standard off-the-shelf products with options for customization.
GaN Wideband Amplifers for C-UAS systems
Part Number | Min Freq. | Max Freq. | Pout [W] | Pout [dBm] | Gain [dB] | Dimension |
20 | 800 | 150 | 51.8 | 41.8 | 120 x 65 x 16.7 | |
20 | 1000 | 20 | 43 | 40 | 70 x 50.8 x 17.3 | |
20 | 1000 | 40 | 46 | 38 | 70 x 50.8 x 17.3 | |
20 | 2500 | 4 | 36 | 17 | 38 x 50.8 x 12.5 | |
500 | 2500 | 50 | 47 | 38 | 98.8 x 75 x 25 | |
500 | 2500 | 50 | 47 | 38 | 72 x 50.8 x 16.8 | |
700 | 2700 | 50 | 47 | 37 | 72 x 50.8 x 16.8 | |
700 | 2500 | 100 | 50 | 53 | 134 x 105 x 30 | |
RWP15080-20 | 700 | 2700 | 100 | 50 | 53 | 134 x 105 x 30 |
2000 | 6000 | 20 | 43 | 35 | 170 x 64 x 21.5 | |
2000 | 3000 | 25 | 44 | 25 | 70 x 50.8 x 17.1 | |
2000 | 6000 | 65 | 48 | 48 | 175 x 90 x 23 | |
RUM43010-10 | 2500 | 6000 | 10 | 40 | 29 | 130 x 64 x 21.5 |
RFHIC offers an extensive portfolio of wideband amplifiers designed for Counter-UAS applications, with operation capabilities up to 6 GHz. Utilizing our advanced Gallium Nitride (GaN) technology, our products deliver higher breakdown voltage, broader bandwidth, and superior efficiency.
To learn more about our GaN wideband amplifiers, contact us!
About RFHIC Corporation
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation - to create a better connected, safer, and stronger world for generations. Learn more at www.c0006.bizhomepass.kr. RFHIC® is a registered trademark.
