Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AE367
Description
RFHIC’s AE367 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed as a pre-drive or drive amplifier for 2G and 3G communication equipment. Operating from 50 to 3500 MHz, the AE367 provides 27 dBm of output power at P1dB with a gain of 15.5 dB. The AE367 is packaged in a plastic surface mount (SMD), lowering manufacturing costs.
View Product Specification
Receiver IF Amplifier
Cellular Communications
Base Station
CATV
DCS
WCDMA
Specification
| Min Freq. | 50MHz |
|---|---|
| Max Freq. | 3500MHz |
| Noise Figure | 3.5dB |
| VDC | 5 |
| Package | SOT-89 |
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