Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE24200P
Description
RFHIC’s IE24200P is a 200W gallium nitride on silicon carbide (GaN-on-SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable from 2400 to 2500 MHz, the IE24200P provides a high gain of 13.1dB with a 76.6% drain efficiency at 50V. To simplify system integration, the IE24200P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product Specification
Microwave Heating
Microwave Drying
Microwave Ablation
Microwave Plasma Generation
Microwave Lighting
Specification
| Min Freq. | 2400MHz |
|---|---|
| Max Freq. | 2500MHz |
| Output Power | 200W |
| Power Gain | 13.8dB |
| Drain Efficiency | 74.9% |
| VDC | 50 |
| Package Type | Flange |
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