Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE13550D
Description
RFHIC’s IE13550D is a 550W gallium nitride on silicon carbide (GaN-on-SiC) transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operable from 1295 to 1305 MHz, the IE13550D provides a high power gain of 15 dB with a 79.5% drain efficiency at 50V. To simplify system integration, the IE13550D is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product Specification
Linear Accelerators (LINAC)
Medical Linear Accelerators (LINAC)
Scientific Linear Accelerators (LINAC)
Particle Accelerators
Proton Beam Therapy
Specification
| Min Freq. | 1295MHz |
|---|---|
| Max Freq. | 1305MHz |
| Output Power | 550W |
| Power Gain | 14.9dB |
| Drain Efficiency | 79.2% |
| VDC | 50 |
| Package Type | Flange |
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