Products RF Transistors Transistors - Wireless Infrastructure H019

H019

Transistors - Wireless Infrastructure
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Description

RFHIC’s H019 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3800 MHz.The H019 delivers 15.8 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.3400MHz
Max Freq.3800MHz
Typ Output Power0.8W
Saturation Power15.8W
Power Gain18.2dB
Efficiency14.5%
VDC48
PackageDFN66726L-Q2
Package TypeSurface Mount

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