Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE18250D
Description
RFHIC’s IE18250D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz. The IE18250D delivers 260 W of saturated power at 48V with a drain efficiency of 58% at 46.5dBm.The IE18250D is designed to provide higher efficiency and linearity. The device is internally matched and is suitable for muti-carrier, WiMAX, and Doherty amplifier base station applications.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Min Freq. | 1805MHz |
|---|---|
| Max Freq. | 1880MHz |
| Typ Output Power | 45W |
| Saturation Power | 260W |
| Power Gain | 17dB |
| Efficiency | 58% |
| VDC | 48 |
| Package | RF24001DKR3 |
| Package Type | Flange |
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