Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE27275D
Description
RFHIC’s IE27275D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency of 59% at 47dBm.The IE27275D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and multi-carrier base station equipment applications.
View Product SpecificationSpecification
| Min Freq. | 2575MHz |
|---|---|
| Max Freq. | 2635MHz |
| Typ Output Power | 50W |
| Saturation Power | 275W |
| Power Gain | 14.1dB |
| Efficiency | 59% |
| VDC | 48 |
| Package | RF24001DKR3 |
| Package Type | Flange |
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