Products RF Transistors Transistors - Wireless Infrastructure H017

H017

Transistors - Wireless Infrastructure
Production
Contact
Sales Download Datasheet

Description

RFHIC’s H017 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 2700 MHz.The H017 delivers 28.2 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

View Product Specification

Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.1800MHz
Max Freq.2700MHz
Typ Output Power2W
Saturation Power28.2W
Power Gain17.9dB
Efficiency30%
VDC48
PackageDFN66726L-Q2
Package TypeSurface Mount

Related Products

RA618-NF ›
RFHIC’s RA618-NF is a 6-1/8″ EIA to N(F) Adapter that covers the full 300 to 800 (UHF) with a power handling rating of 1.0kw CW. The RA618-NF sup...