Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID20275WD
Description
RFHIC’s ID20275WD is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1880 to 2025 MHz. The ID20275WD delivers 282 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.
View Product Specification
WiMAX, LTE, WCDMA
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Min Freq. | 1880MHz |
|---|---|
| Max Freq. | 2025MHz |
| Typ Output Power | 48W |
| Saturation Power | 282W |
| Power Gain | 15.3dB |
| Efficiency | 53% |
| VDC | 48 |
| Package | RF18010DKR3 |
| Package Type | Flange |
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