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H004

Transistors - Wireless Infrastructure
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Description

RFHIC’s H004 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 0 to 6000 MHz.The H004 delivers 28 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Max Freq.6000MHz
Typ Output Power6.3W
Saturation Power28W
Power Gain18.7dB
Efficiency32%
VDC48
PackageDFN66726L-Q2
Package TypeSurface Mount

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