Products RF Transistors Transistors - Wireless Infrastructure H025C11A

H025C11A

Transistors - Wireless Infrastructure
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Description

RFHIC’s H025C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3800 MHz.The H025C11A delivers 302 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.3400MHz
Max Freq.3800MHz
Typ Output Power45W
Saturation Power302W
Power Gain11.1dB
Efficiency45%
VDC48
PackageRF24010DKR3
Package TypeFlange

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