Products RF Transistors Transistors - Wireless Infrastructure H018C11A

H018C11A

Transistors - Wireless Infrastructure
Production
Contact
Sales Download Datasheet

Description

RFHIC’s H018C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 2520 to 2630 MHz.The H018C11A delivers 316 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

View Product Specification

Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.2520MHz
Max Freq.2630MHz
Typ Output Power40W
Saturation Power316W
Power Gain14.4dB
Efficiency50%
VDC48
PackageRF18010DKR3
Package TypeFlange

Related Products

RA618-NF ›
RFHIC’s RA618-NF is a 6-1/8″ EIA to N(F) Adapter that covers the full 300 to 800 (UHF) with a power handling rating of 1.0kw CW. The RA618-NF sup...