Products RF Transistors Transistors - Wireless Infrastructure H028P1

H028P1

Transistors - Wireless Infrastructure
Production
Contact
Sales Download Datasheet

Description

RFHIC’s H028P1 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz.The H028P1 delivers 33.1 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

View Product Specification

Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.2620MHz
Max Freq.2690MHz
Typ Output Power3.2W
Saturation Power33.1W
Power Gain18.6dB
Efficiency23%
VDC48
PackageDFN66726L-Q2
Package TypeSurface Mount

Related Products

RA618-NF ›
RFHIC’s RA618-NF is a 6-1/8″ EIA to N(F) Adapter that covers the full 300 to 800 (UHF) with a power handling rating of 1.0kw CW. The RA618-NF sup...