Products RF Transistors Transistors - Wireless Infrastructure H009C11A

H009C11A

Transistors - Wireless Infrastructure
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Description

RFHIC’s H009C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz.The H009C11A delivers 385 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.1805MHz
Max Freq.1880MHz
Typ Output Power63W
Saturation Power385W
Power Gain15.1dB
Efficiency55%
VDC48
PackageRF24010DKR3
Package TypeFlange

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