Products RF Transistors Transistors - Wireless Infrastructure H031

H031

Transistors - Wireless Infrastructure
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Description

RFHIC’s H031 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3800 MHz.The H031 delivers 56.2 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet

WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.3400MHz
Max Freq.3800MHz
Typ Output Power10W
Saturation Power56.2W
Power Gain14.2dB
Efficiency46%
VDC48
PackageDFN7010010L
Package TypeSurface Mount

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