Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID22801D
Description
RFHIC’s ID22801D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2170 MHz.The ID22801D delivers 762 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.
View Product Specification
WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
Specification
| Min Freq. | 2110MHz |
|---|---|
| Max Freq. | 2170MHz |
| Typ Output Power | 104.7W |
| Saturation Power | 762W |
| Power Gain | 15.9dB |
| Efficiency | 53% |
| VDC | 48 |
| Package | RF26009DKR3 |
| Package Type | Flange |
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