Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RRP291K0-10
Description
RFHIC’s RRP291K0-10 is an 1100 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from S-band, the RRP291K0-10 achieves 60.5 dB of gain with an efficiency of 35%. The RRP291K0-10 utilizes our in-house gallium-nitride-on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification
Weather Radar
Air Traffic Control Radar
Surveillance Ground Radar
Meteorological Radar
Early Detection Radar
Specification
| Band | S-band |
|---|---|
| Min Freq. | 2700MHz |
| Max Freq. | 3100MHz |
| Type | Module |
| Typ Output Power | 1100W |
| Power Gain | 61dB |
| PAE | 35% |
| VDC | 50 |
Related Products
RRP1214550-14 ›
RFHIC’s RRP1214550-14 is an L-band, 560W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 1200 to 1400 MH...
RRP03250-10 ›
RFHIC’s RRP03250-10 is a 300 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 135 to 460 MHz, the RRP03...
RRP10113K0-30 ›
RFHIC’s RRP10113K0-30 is a 3.5kW, pulsed GaN solid-state power amplifier operable from 1000 to 1100 MHz ( L-band). The RRP10113K0-30 serve as a cost-effectiv...
